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Magnetoelectrics

Making metallic memories

Nature Nanotechnology volume 5, pages 761–762 (2010)Cite this article

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A Correction to this article was published on 04 November 2010

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A phase transition at the surface of a thin film of iron can be exploited to create a metallic non-volatile memory.

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Figure 1: A hypothetical memory device exploiting magnetoelectric coupling in metallic thin films.

Change history

  • 04 November 2010

    In the original and print version of this News & Views, in the second sentence of the third paragraph, 'millivolts' should have read 'megavolts'. In the second sentence of the sixth paragraph, 'mV' should have read 'MV'. The HTML and PDF versions of the text are correct.

References

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  1. Ramamoorthy Ramesh is in the Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA. rramesh@berkeley.edu,

    Ramamoorthy Ramesh

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  1. Ramamoorthy Ramesh
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Ramesh, R. Making metallic memories. Nature Nanotech 5, 761–762 (2010). https://doi.org/10.1038/nnano.2010.218

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