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Ultrahigh-density phase-change data storage without the use of heating

Nature Nanotechnology volume 4, pages 727–731 (2009)Cite this article

Abstract

Non-volatile memories based on scanning probes offer very high data densities, but existing approaches require the probe to be heated, which increases the energy expenditure and complexity of fabrication1,2,3,4,5,6,7,8,9,10,11,12,13,14. Here, we demonstrate the writing, reading and erasure of an ultrahigh-density array of nanoscopic indentations without heating either the scanning probe tip or the substrate. An atomic force microscope tip causes microphase transitions of the polystyrene-block-poly(n-pentyl methacrylate) of a block copolymer to occur at room temperature by application of pressure alone. We demonstrate a data storage density of 1 Tb in−2, which is limited only by the size of the tip. This demonstration of a pressure-based phase-change memory at room temperature may expedite the development of next-generation ultrahigh-density data storage media.

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Figure 1: Schematic of the fabrication of a nanopatterned surface with an ultrahigh-density array of nanoscopic indentations and AFM height images and height profiles of the nanopatterns.
Figure 2: Nanopattern formation through the microphase transition of the lamellar microdomains to a disordered state in the block copolymer thin film.
Figure 3: Reading of the nanopatterns by a piezoelectric sensing method.
Figure 4: Repeated writing and bulk erasing processes and local erasing.

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Acknowledgements

This work was supported by the National Creative Research Initiative Program supported by the National Research Foundation of Korea (NRF). We appreciate the assistance of Yeong Ki Kim in experiments of FIB and TEM at National Center for Nanomaterials and Technology (NCNT), and Moon Seop Hyun in AFM experiment at National Nano Fab Center (NNFC). Small-angle X-ray scattering was performed at PLS beam line (4C2) supported by POSCO and NRF.

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Authors and Affiliations

  1. Department of Chemical Engineering, National Creative Research Center for Block Copolymer Self-Assembly, Pohang University of Science and Technology, Kyungbuk, 790-784, Korea

    Ara Jo, Wonchul Joo & Jin Kon Kim

  2. MS Group, Devices and Materials Lab, LG Electronics Advanced Research Institute, #16, Woomyeon-dong, Seocho-gu, Seoul, 137-724, Korea

    Won-Hyeog Jin & Hyojin Nam

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  1. Ara Jo
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  2. Wonchul Joo
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Contributions

A.J. and J.K.K. designed and implemented the system, analysed the data and wrote the paper. W.J., W.-H.J. and H.N. contributed data. All authors edited and commented on the paper.

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Correspondence to Jin Kon Kim.

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Jo, A., Joo, W., Jin, WH. et al. Ultrahigh-density phase-change data storage without the use of heating. Nature Nanotech 4, 727–731 (2009). https://doi.org/10.1038/nnano.2009.260

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