Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • Letter
  • Published:

Observation of rare-earth segregation in silicon nitride ceramics at subnanometre dimensions

Abstract

Silicon nitride (Si3N4) ceramics are used in numerous applications because of their superior mechanical properties1,2. Their intrinsically brittle nature is a critical issue, but can be overcome by introducing whisker-like microstructural features3,4. However, the formation of such anisotropic grains is very sensitive to the type of cations used as the sintering additives1,2,5. Understanding the origin of dopant effects, central to the design of high-performance Si3N4 ceramics, has been sought for many years. Here we show direct images of dopant atoms (La) within the nanometre-scale intergranular amorphous films typically found at grain boundaries, using aberration corrected Z-contrast scanning transmission electron microscopy. It is clearly shown that the La atoms preferentially segregate to the amorphous/crystal interfaces. First-principles calculations confirm the strong preference of La for the crystalline surfaces, which is essential for forming elongated grains and a toughened microstructure. Whereas principles of micrometre-scale structural design are currently used to improve the mechanical properties of ceramics, this work represents a step towards the atomic-level structural engineering required for the next generation of ceramics.

This is a preview of subscription content, access via your institution

Access options

Buy this article

Prices may be subject to local taxes which are calculated during checkout

Figure 1: Atomic-resolution scanning transmission electron microscope (STEM) images of an intergranular film (IGF) in La-doped β-Si3N4.
Figure 2: Magnified HAADF-STEM images of the interface between the IGF and the prismatic surface of an β-Si3N4 grain.

Similar content being viewed by others

References

  1. Chen, I. W., Becher, P. F., Mitomo, M., Petzow, G. & Yen, T.-S. (eds) Silicon Nitride Ceramics—Scientific and Technological Advances (MRS Proceedings, Mater. Res. Soc. 287, Pittsburgh, Pennsylvania, 1993)

  2. Hoffmann, M. J. & Petzow, G. (eds) Tailoring of Mechanical Properties of Si3N4 Ceramics (NATO ASI Series E, Applied Sciences Vol. 276, Kluwer Academic, Dordrecht, 1994)

  3. Lange, F. F. Relation between strength, fracture energy, and microstructure of hot pressed Si3N4 . J. Am. Ceram. Soc. 56, 518–522 (1973)

    Article  CAS  Google Scholar 

  4. Tani, E., Umebayashi, K., Kishi, K. & Kobayashi, K. Gas-pressure sintering of Si3N4 with concurrent addition of Al2O3 and 5wt% rare earth oxide: High fracture toughness Si3N4 with fiber-like structure. Am. Ceram. Soc. Bull 65, 1311–1315 (1986)

    CAS  Google Scholar 

  5. Hoffmann, M. J., Gu, H. & Cannon, R. M. in Interfacial Engineering for Optimized Properties II (eds Carter, C. B., Hall, E. L., Briant, C. L. & Nutt, S.) 65–74 (MRS Proceedings 586, Mater. Res. Soc., Warrendale, Pennsylvania, 2000)

    Google Scholar 

  6. Becher, P. F. et al. Microstructural design of silicon nitride with improved fracture toughness: I, Effects of grain shape and size. J. Am. Ceram. Soc. 81, 2821–2830 (1998)

    Article  CAS  Google Scholar 

  7. Sun, E. Y. et al. Microstructural design of silicon nitride with improved fracture toughness: II, Effects of yttria and alumina additives. J. Am. Ceram. Soc. 81, 2831–2840 (1998)

    Article  CAS  Google Scholar 

  8. Sun, E. Y. et al. Debonding behavior between β-Si3N4 whiskers and oxynitride glasses with or without an epitaxial β-SiAlON interface layer. Acta Mater. 47, 2777–2785 (1999)

    Article  CAS  Google Scholar 

  9. Krämer, M., Hoffmann, M. J. & Petzow, G. Grain growth studies of silicon nitride dispersed in an oxynitride glass. J. Am. Ceram. Soc. 76, 2778–2784 (1993)

    Article  Google Scholar 

  10. Kleebe, H.-J. Structure and chemistry of interfaces in Si3N4 ceramics studied by transmission electron microscopy. J. Ceram. Soc. Jpn 105, 453–475 (1997)

    Article  CAS  Google Scholar 

  11. Gu, H., Pan, X., Cannon, R. M. & Rühle, M. Dopant distribution in grain-boundary films in calcia-doped silicon nitride ceramics. J. Am. Ceram. Soc. 81, 3125–3135 (1998)

    Article  CAS  Google Scholar 

  12. Ziegler, A., Kisielowski, C., Hoffmann, M. J. & Ritchie, R. O. Atomic resolution transmission electron microscopy of the intergranular structure of a Y2O3-containing silicon nitride ceramic. J. Am. Ceram. Soc. 86, 1777–1785 (2003)

    Article  CAS  Google Scholar 

  13. Batson, P. E., Dellby, N. & Krivanek, O. L. Sub-ångstrom resolution using aberration corrected electron optics. Nature 418, 617–620 (2002)

    Article  ADS  CAS  Google Scholar 

  14. Krivanek, O. L., Nellist, P. D., Dellby, N., Murfitt, M. F. & Szilagyi, Z. Towards sub-0.5 angstrom electron beams. Ultramicroscopy 96, 229–237 (2003)

    Article  CAS  Google Scholar 

  15. Pennycook, S. J. & Jesson, D. E. High-resolution Z-contrast imaging of crystals. Ultramicroscopy 37, 14–38 (1991)

    Article  Google Scholar 

  16. Pennycook, S. J. Structure determination through Z-contrast microscopy. Adv. Imag. Electron Phys. 123, 173–206 (2002)

    Article  CAS  Google Scholar 

  17. Averill, F. W. & Painter, G. S. Symmetrized partial-wave method for density functional cluster calculations. Phys. Rev. B 50, 7262–7267 (1994)

    Article  ADS  CAS  Google Scholar 

  18. Painter, G. S., Becher, P. F., Shelton, W. A., Satet, R. L. & Hoffmann, M. J. Differential binding energies: effects of rare-earth additions on grain growth of β-Si3N4 and ceramic microstructure. Phys. Rev. Lett. submitted

Download references

Acknowledgements

We thank R. L. Satet and M. J. Hoffmann for supplying the silicon nitride ceramics used in this study. This work was supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under contract with UT-Battelle, LLC. N.S. is a fellow of the Japan Society for the Promotion of Science (JSPS).

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Naoya Shibata.

Ethics declarations

Competing interests

T.R.G. is chief scientist in Pixon LLC. The remaining authors declare that they have no competing financial interests.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Shibata, N., Pennycook, S., Gosnell, T. et al. Observation of rare-earth segregation in silicon nitride ceramics at subnanometre dimensions. Nature 428, 730–733 (2004). https://doi.org/10.1038/nature02410

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1038/nature02410

This article is cited by

Comments

By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing