Abstract
We report here the first efficient p-type Si-based semiconductor–liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages, Voc, of 0.38–0.40 V with several redox systems1–8. Photocurrent–voltage studies of p-Si cathodes in CH3CN solvent have demonstrated 2.5% efficiency for conversion of 632.8-nm light to electricity with the N,N′-dimethyl-4,4′-bipyridinium2+/+ redox system1, and 0.5–2.4% with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6–9 and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10%, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.
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Lieber, C., Gronet, C. & Lewis, N. Evidence against surface state limitations on efficiency of p-Si/CH3CN junctions. Nature 307, 533–534 (1984). https://doi.org/10.1038/307533a0
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DOI: https://doi.org/10.1038/307533a0
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