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Volume 6 Issue 2, February 2014

Research Highlight

  • A breakthrough in semiconductor nanowire synthesis that allows fine control over axial heterostructuring was recently advanced by Hollingsworth and co-workers.1 The report also reveals fascinating mechanistic aspects of catalyzed nanowire growth.

    Catalyzed wire or whisker growth was discovered by Wagner and Ellis in 1964.2 They found that gold droplets on a silicon substrate catalyze silicon wire growth under chemical-vapor-deposition conditions. Gaseous precursors react at the gold-droplet surfaces, depositing silicon into solution within the gold droplets. The droplets become supersaturated, inducing precipitation of crystalline silicon upon the substrate. As precipitation occurs only at the droplet–silicon interfaces, the silicon crystallites acquire pseudo-cylindrical wire morphologies as they grow upward from the substrate. The gold-catalyst droplets rise elevator-like from the substrate, riding upon the tips of the growing wires. Wagner and Ellis2 named this method ‘vapor-liquid-solid’ or ‘VLS’ growth after the three participating phases: the vaporous precursors, liquid catalyst droplets and solid silicon wires.

    • William E Buhro
    Research Highlight Open Access

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Review

  • Various spherical nanocarbon materials, including fullerenes, carbon nanohorn aggregates, nanodiamonds etc., have shown potential anti-cancer effects. Fullerenes and metallofullerenes possess outstanding ROS-scavenging capability, as well as other biological effects like immunity enhancement etc., affording promising tumor suppression potential. Carbon nanohorn aggregates and nanodiamond particles have demonstrated effective drug delivery ability for cancer therapy. Moreover, it is noteworthy that these spherical nanocarbon materials show positive toxicological evaluation results, encouraging possible practical usage for biomedical applications.

    • Jing Wang
    • Zhongbo Hu
    • Yuliang Zhao
    Review Open Access
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Original Article

  • Nonpolar resistive switching reproducibly occurs in arrays of nanoscale cells composed of multilayered NiO/Pt nanowires with significantly reduced switching voltages, narrow switching voltage distributions and a robust multilevel memory effect. A high resistance ratio (105) between the high- and low-resistance states in nanoscale cells enables stable multilevels to be induced easily by a series of pulsed voltages. The existence of intermediate resistance states in NiO/Pt nanowire arrays can be well explained by the binary-resistor model combined with energy perturbations induced by the pulse voltage. Our bottom-up approach and proposed mechanism explain the controllable multilevel memory effect.

    • Yen-Chun Huang
    • Po-Yuan Chen
    • Chih-Huang Lai
    Original Article Open Access
  • Flexible and transparent electronics, such as interactive digital products and human-friendly health-care monitors, are expected to fundamentally change the way of our daily life. Inorganic semiconductors, as a class of important functional materials, are key components of electronic devices. However, their applications in soft electronics are severely confined due to the brittleness. We demonstrate that by structural design of a nanobelt network, extraordinary mechanical flexibility and high optical transparency can be achieved in conventionally fragile ceramics. High-performance photodetectors based on this inorganic nanobelt network are demonstrated on multiple flexible substrates, which strongly indicates its great potential in soft electronics.

    • Siya Huang
    • Hui Wu
    • Wei Pan
    Original Article Open Access
  • A stretchable wrinkled organic memory has been successfully demonstrated. The stretchable organic memory with a graphene bottom electrode possesses rippled structures. The stretchable organic memory exhibits excellent electrical switching behaviors and memory effects even under repetitive stretching. It is believed that this stretchable organic memory may be beneficial for digital information storage in future stretchable electronic systems.

    • Ying-Chih Lai
    • Yi-Chuan Huang
    • Yang-Fang Chen
    Original Article Open Access
  • The p-type bismuth telluride-based polycrystalline materials suiting for low-temperature power generations (near 380 K) have been obtained through Sb-alloying and HD, which suppresses the detrimental effect of intrinsic conduction at elevated temperature via increasing the hole concentration and band gap. The hot-deformed Bi0.3Sb1.7Te3 alloy, not usual composition Bi0.5Sb1.5Te3, shows a maximum ZT of 1.3 at 380 K, indicating a bright application potential in low-temperature power generations.

    • Li-Peng Hu
    • Tie-Jun Zhu
    • Xin-Bing Zhao
    Original Article Open Access
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